SSF1030 100v n-channel mosfet www.goodark.com page 1 of 7 rev.2.2 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 45 i d @ tc = 100c continuous drain current, v gs @ 10v 32 i dm pulsed drain current 180 a power dissipation 163 w p d @tc = 25c linear derating factor 1.08 w/c v ds drain-source voltage 100 v v gs gate-to-source voltage 20 v e as single pulse avalanche energy @ l=0.27mh 88 mj i as avalanche current @ l=0.27mh 25.5 a t j t stg operating junction and storage temperature range -55 to +175 c v dss 100v r ds (on) 20.5m (typ.) i d 45a to-220 marking and pin assignment schematic diagram ? advanced process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 175 operating temperature ? lead free product these n-channel enhancement mode power field effect transistors are produced using proprietary mosfet technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switch mode power supplies.
SSF1030 100v n-channel mosfet www.goodark.com page 2 of 7 rev.2.2 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 0.92 c/w junction-to-ambient (t 10s) 62 c/w r ja junction-to-ambient (pcb mounted, steady-state) 40 c/w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 100 v v gs = 0v, i d = 250a 20.5 22 v gs =10v,i d =30a r ds(on) static drain-to-source on-resistance 44.4 m t j = 125c 2 4 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 2.56 v t j = 125c 1 v ds =100v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125c 100 v gs =20v i gss gate-to-source forward leakage -100 na v gs = -20v q g total gate charge 46.3 q gs gate-to-source charge 12.0 q gd gate-to-drain("miller") charge 16.9 nc i d = 30a, v ds =30v, v gs = 10v t d(on) turn-on delay time 13.9 t r rise time 13.2 t d(off) turn-off delay time 37.8 t f fall time 11.1 ns v gs =10v, v dd =30v, r l =15, r gen =2.55 i d =2a c iss input capacitance 2042 c oss output capacitance 144 c rss reverse transfer capacitance 114 pf v gs = 0v v ds = 25v ? = 1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 60 a i sm pulsed source current (body diode) 240 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 0.91 1.3 v i s =30a, v gs =0v, t j = 25c t rr reverse recovery time 45.1 ns q rr reverse recovery charge 101 nc t j = 25c, i f =30a, di/dt = 100a/s
SSF1030 100v n-channel mosfet www.goodark.com page 3 of 7 rev.2.2 test circuits and waveforms switch waveforms: notes : calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c
SSF1030 100v n-channel mosfet www.goodark.com page 4 of 7 rev.2.2 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical output characteristics figure 3. drain-to-source breakdown voltage vs. case temperature figure 4: normalized on-resistance vs. case temperature
SSF1030 100v n-channel mosfet www.goodark.com page 5 of 7 rev.2.2 figure 5. maximum drain current vs. case temperature typical electrical and thermal characteristics figure 6.typical capacitance vs. drain-to-source voltage figure7. maximum effective transient thermal impedance, junction-to-case
SSF1030 100v n-channel mosfet www.goodark.com page 6 of 7 rev.2.2 mechanical data min nom max min nom max a - 1.300 - - 0.051 - a1 2.200 2.400 2.600 0.087 0.094 0.102 b - 1.270 - - 0.050 - b1 1.270 1.370 1.470 0.050 0.054 0.058 c - 0.500 - - 0.020 - d - 15.600 - - 0.614 - d1 - 28.700 - - 1.130 - d2 - 9.150 - - 0.360 - e 9.900 10.000 10.100 0.390 0.394 0.398 e1 - 10.160 - - 0.400 - p - 3.600 - - 0.142 - p1 1.500 0.059 e l 12.900 13.100 13.300 0.508 0.516 0.524 ? 1 - 7 0 - - 7 0 - ? 2 - 7 0 - - 7 0 - ? 3 - 3 0 - 5 0 7 0 9 0 ? 4 - 3 0 - 1 0 3 0 5 0 symbol dimension in millimeters dimension in inches 2.54bsc 0.1bsc to-220 package outline dimension_gn e d d1 p a ? 1 d2 a1 c e b b1 ? 2 ? l ? 4 p1 e
SSF1030 100v n-channel mosfet www.goodark.com page 7 of 7 rev.2.2 ordering and marking information device marking: SSF1030 package (available) to-220 operating temperature range c : -55 to175 oc devices per unit package type units/ tube tubes/inner box units/inner box inner boxes/carton box units/carton box to-220 50 20 1000 6 6000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 175 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =125 or 175 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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